Advances in Applied Science Research Open Access

  • ISSN: 0976-8610
  • Journal h-index: 57
  • Journal CiteScore: 93.86
  • Average acceptance to publication time (5-7 days)
  • Average article processing time (30-45 days) Less than 5 volumes 30 days
    8 - 9 volumes 40 days
    10 and more volumes 45 days
Reach us +32 25889658


Thermal behavior of semiconductor bismuth tri-sulphide [Bi2S3] crystals grown by silica gel

T. K. Patil

The Bismuth Tri-Sulphide [Bi2S3] crystals have been grown in Sodium-Metasilicate gel using the single diffusion method at room temperature. The grown crystals were characterized by thermo analytical techniques (TGA, DTA, DTG and DSC), X-ray powder diffraction (XRD), By powder X-ray diffraction analysis the crystal structure is confirmed to be Orthorhombic or Rhombus, having lattice parameters a = 11.136 A????°, b = 11.256 A????°, and c = 3.968 A????° . Thermal study reveals that Bismuth Tri-Sulphide crystal is Di-hydrous. TGA, DTA, DTG and DSC analysis shows a remarkable thermal stability.

Awards Nomination 0.329+ Million Readerbase
Share This Page
Recommended Webinars & Conferences